BIOTECHNOLOGY & SEMICONDUCTORDiffusers |
A simple means to increase the through-put of a tool without affecting yield is to increase the speed of any steps not related to the actual formation of the semiconductor circuit. One such step is re-pressurization or "venting" of the load lock chamber, which creates a positive-pressure environment that inhibits particle migration from the clean room into the chamber.
The challenge: Pressurize without disturbing particles.
The chamber is a contaminated environment, and pressurization
can disturb the particles contained within, causing them to
fall on the wafer's surface. The challenge is to pressurize
as quickly as possible, but without creating jets of gas that
can disturb particles.
The solution: Mott GasShield® POU (Point-of-Use) Diffusers.
Mott
porous metal can greatly reduce "vent" time of the
load lock without the adverse "jet" effect seen
through showerheads and simple 1/4" inlet lines. The
porous metal reduces the velocity of the purge gas to ensure
a uniform and laminar flow of gas into the chamber.
Alternatives to the Mott diffuser create flows with one or more, possibly non-laminar, jets of gas. Our diffusers, by comparison, have been tested for uniform flow velocity to ±5% across the entire surface.
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Mott GasShield POU Diffusers consist of an element made from process-determined materials in micron grades from 100 down to our patented NanoMetal® media providing 9-log filtration with user-specified hardware designed to allow controlled, non- disruptive filling of load lock and reactor chambers. The diffusers are carefully designed to maximize flow while minimizing pressure drop, which results in the desired, uniform diffusion of gas through the porous element into the chamber.
Packaging.
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